Intel heralds phase change memory breakthrough

 

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By Barry Collins

Posted on 29 Oct 2009 at 11:38

Intel claims to have made a significant breakthrough with a new type of high-density computer memory.

Phase change memory (PCM) is a non-volatile technology (which means it can store data without power) that's also well suited to executing code, meaning it could become a one-size-fits-all replacement for both flash and DRAM. It uses a type of material called chalcogenide, which is already used in rewritable CD and DVDs.

For the first time Intel and its partner Numonyx claim they've found a way to stack up 64MB PCM chips within a single die. Intel claims this could lead to memory chips with greater capacity and lower power consumption than what's available today.

"The results are extremely promising,” says Greg Atwood, senior technology fellow at Numonyx. “The results show the potential for higher density, scalable arrays and NAND-like usage models for PCM products in the future.

"This is important as traditional flash memory technologies face certain physical limits and reliability issues, yet demand for memory continues to rise in everything from mobile phones to data centres.”

Intel and Numonyx will continue developing multiple layers of the PCM technology, which has the potential to far exceed the storage capacity and read/write speed of today's memory.